Because they are understood from the perspective of one-dimensional
physics, macro/micro-scale field effect transistors (FETs) generally ignore the
challenge of current leakage. However,
on a nano-scale, the effects of current leakage become substantially more
significant, affecting FET performance and lifetime. Additionally, efficient performance and
longevity of group III-V FETs requires an insulating gate oxide. Existing FET gate oxide configurations have
applied the gate either from the top of the device or from three sides of the
device’s current channel. Current
control provided by these technologies becomes less sufficient at device
dimensions smaller than 10 nm. Thus,
present research efforts in nano-scale FET technologies are focusing on
alternative methods of increasing current control, device performance and device
lifetime. As field effect transistors
approach smaller nano-scale dimensions, there exists a growing market need for
more efficient gate technologies and configurations.
University of New Mexico researchers have developed a gate-all-around
field effect transistor technology employing a well-defined nano-scale floating
current channel from source to drain.
The current channel is surrounded with Group III oxide formed by liquid
phase chemical-enhanced oxidation for thermal stability.
STC has filed intellectual property on this exciting new technology and is currently exploring commercialization options. If you are interested in information about this or other technologies, please contact Arlene Mirabal at email@example.com or 505-272-7886.