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Project TitleGate-All-Around Metal-Oxide-Semiconductor Transistors with Gate Oxides
Track Code2013-052
Short Description

A gate-all-around field effect transistor technology employing a well-defined nano-scale floating current channel from source to drain.

Abstract

The current channel is surrounded with Group III oxide formed by liquid phase chemical-enhanced oxidation for thermal stability.

 
Tagssemiconductor, transistors
 
Posted DateJul 3, 2013 4:41 PM

Researcher

Name
Steven Brueck
Seung-Chang Lee
Daniel Feezell

Manager

Name
Briana Wobbe

Background

Because they are understood from the perspective of one-dimensional physics, macro/micro-scale field effect transistors (FETs) generally ignore the challenge of current leakage.  However, on a nano-scale, the effects of current leakage become substantially more significant, affecting FET performance and lifetime.  Additionally, efficient performance and longevity of group III-V FETs requires an insulating gate oxide.  Existing FET gate oxide configurations have applied the gate either from the top of the device or from three sides of the device’s current channel.  Current control provided by these technologies becomes less sufficient at device dimensions smaller than 10 nm.  Thus, present research efforts in nano-scale FET technologies are focusing on alternative methods of increasing current control, device performance and device lifetime.  As field effect transistors approach smaller nano-scale dimensions, there exists a growing market need for more efficient gate technologies and configurations.

Technology Description

University of New Mexico researchers have developed a gate-all-around field effect transistor technology employing a well-defined nano-scale floating current channel from source to drain.  The current channel is surrounded with Group III oxide formed by liquid phase chemical-enhanced oxidation for thermal stability.

Advantages/Applications

  • Greater current control (less leakage)
  • Increased device performance and longevity
  • Applications include semiconductors, integrated circuit, transistors

INQUIRES

STC has filed intellectual property on this exciting new technology and is currently exploring commercialization options. If you are interested in information about this or other technologies, please contact Arlene Mirabal at amirabal@stc.unm.edu or 505-272-7886.

Files

File Name Description
9,257,535 Issued Patent None Download
9,076,813 Issued Patent None Download

Intellectual Property

Patent Number Issue Date Type Country of Filing
9,257,535 Feb 9, 2016 Divisional United States
9,076,813 Jul 7, 2015 Utility United States